MOSFET power dissipation is the sum of the conduction loss and the switching losses. These power losses are very different from each other. Conduction loss is the static loss wherein the main contributor is the drain to source on-state resistance of the MOSFET as well as the drain current. While switching losses are dynamic losses that are dependent on the
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MOSFET could be used as a switch or amplifier. Regardless of the application, there is a conduction loss. Let’s explore what is the meaning of conduction loss and how to compute MOSFET conduction loss. Conduction loss is the main contributor to MOSFET power dissipation when operating in a non-switching application. Even in switching applications, conduction loss is still very significant
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How to get MOSFET correct RDSon value is the pre-requisite to compute the MOSFET conduction loss or static power dissipation. RDSon is the drain to source on-state resistance of the MOSFET. The term “correct” is relative to the target result. Supposing the target is to compute the maximum power dissipation, then the correct RDSon value must be the worst-case value.
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There are two types of losses in MOSFET. One is conduction loss and the other one is switching loss. Conduction loss is explained in detail here. Switching loss is not as easy as computing the conduction loss. There are many parameters to consider. You need to understand these parameters to select the correct values. However, you don’t need any more
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MOSFET will not work if the gate to source voltage is not satisfied. VGS threshold is one of the specifications in the datasheet. However, it needs little understanding on how to determine the right VGS threshold. This article will discuss how to determine the correct MOSFET VGS threshold. How to Determine the Correct MOSFET VGS Threshold from the Datasheet To
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The important MOSFET design parameter to consider during circuit design are gate threshold voltage, on-state resistance, current stress, voltage stress, power stress and thermal stress. Threshold voltage refers to the gate to source voltage requirement for the MOSFET to turn on. On-state resistance is the equivalent resistance between drain to source when the MOSFET is on. Current stress is related
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You may not know how to use MOSFET as reverse battery protection. The most common method is using a diode. However, diode voltage drop is high and this will creat issue in low voltage circuits. That is the reason many use MOSFET as reverse battery protection due to its very low on state voltage drop.
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A linear voltage regulator is the easiest to deal with. It is very easy to create and do not need much technical knowledge to understand its behavior. It has two variations: series and shunt.
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Surge protection circuit is the one referred by many as protector for voltage spikes in AC grid lines; however it is not limited particularly in AC grid lines. Surge protector or surge protection device is a device that will provide surge suppression or voltage spike suppression so that sensitive devices will not get damage. Surge protector can handle voltage spikes
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Basic NPN Transistor Principles Universities are covering this topic very well but despite I still attempt to discuss NPN transistor principles that I think easier to understand for non technical people. NPN transistor is the name given to a bipolar junction transistor with two N type materials or negative carriers while there is only one P type material or positive
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