MOSFET power dissipation is the sum of the conduction loss and the switching losses. These power losses are very different from each other. Conduction loss is the static loss wherein the main contributor is the drain to source on-state resistance of the MOSFET as well as the drain current. While switching losses are dynamic losses that are dependent on the

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## How to Compute MOSFET Conduction Loss

MOSFET could be used as a switch or amplifier. Regardless of the application, there is a conduction loss. Let’s explore what is the meaning of conduction loss and how to compute MOSFET conduction loss. Conduction loss is the main contributor to MOSFET power dissipation when operating in a non-switching application. Even in switching applications, conduction loss is still very significant

READ## How to Get MOSFET Correct RDSon Value

How to get MOSFET correct RDSon value is the pre-requisite to compute the MOSFET conduction loss or static power dissipation. RDSon is the drain to source on-state resistance of the MOSFET. The term “correct” is relative to the target result. Supposing the target is to compute the maximum power dissipation, then the correct RDSon value must be the worst-case value.

READ## How to Compute MOSFET Switching Losses

There are two types of losses in MOSFET. One is conduction loss and the other one is switching loss. Conduction loss is explained in detailed here. Switching loss is not as easy as computing the conduction loss. There are many parameters to consider. You need to understand these parameters to select the correct values. However, you don’t need any more

READ## How to Determine the Correct MOSFET VGS Threshold

MOSFET will not work if the gate to source voltage is not satisfied. VGS threshold is one of the specifications in the datasheet. However, it needs little understanding on how to determine the right VGS threshold. This article will discuss how to determine the correct MOSFET VGS threshold. How to Determine the Correct MOSFET VGS Threshold from the Datasheet To

READ## How to Select a MOSFET for Power Electronics

These are the important things to consider on how to select a MOSFET for power electronics. These parameters when considered during the development stage, you can ensure a product with a very high reliability. 17 Key Items to Consider on How to Select a MOSFET for Power Electronics 1. Gate to Source Threshold Voltage (VGSth) Let us start this tutorial

READ## Quasi Resonant Flyback Design Tool – Automated and Hassle Free

Are planning to design your own QR flyback? This Quasi Resonant Flyback Design Tool will help you do the job effortlessly. All you need to do is to download the tool on the lowest part of this page. Also ensure that you have Mathcad 14 on your PC to open the file. Try search online if lower versions or higher

READ## How Much Savings on Inverter Refrigerator compared to Traditional Refrigerator?

You are maybe one of the individuals who are asking how much savings on inverter refrigerator. Inverter refrigerator technology is getting popularity nowadays. What is the difference between it and the traditional refrigerator? How much saving to expect by choosing the inverter type? How long to get the return of investment in using the inverter one? Let us answer all

READ## MOSFET Power Dissipation and Junction Temperature Calculation

There are some factors to consider in calculating MOSFET power dissipation. When the power dissipation is known, it is possible to compute the junction temperature of the MOSFET. Important to take that a MOSFET installed with no heatsink has different computation strategy compared to the one with a heatsink. Small current or low power MOSFETs are usually mounted to PCB

READ## MOSFET and BJT Comparison

Two of the most common three terminal semiconductor nowadays are MOSFET and BJT. MOSFET is metal oxide semiconductor field effect transistor. It is a variant of FET. BJT on the other hand is bipolar junction transistor. It is worth to discuss MOSFET and BJT comparison to understand which part to use. Read below comparisons. 1. Application of MOSFET and BJT

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