The transistor referred here is the bipolar junction transistor or BJT. Here is the complete guide on how to select a transistor. 1. Collector Current From the transistor datasheet, look for the collector current rating (IC). For instance the transistor MJD2873Q-13 from Diodes Incorporated, the collector current is specified in below table as Continuous Collector Current. The maximum limit is
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Diode has many uses. It could be as a rectifier, a reverse blocking device, a component in a switching converter or in a switching power supply and so on. Regardless, what application it is, they are the same parameters to consider. These parameters are all given in the diode datasheet. If you are looking for guidance on how to select
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Over temperature protection circuit design is not complicated as you may think. It could be done by using a thermistor and other discrete devices. If you have question on how to design over temperature protection circuit or planning to make one, this article is for you, so keep reading. Key Definitions Used on How to Design Over Temperature Protection Circuit
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P-Channel MOSFET is not popularly known compared to the N-Channel variant. Others said it is because difficult to deal with while others are saying it is not supply abundant and there are others saying that it is only limited to few applications. In this article, I will concentrate to the last reason, about applications. So, stay with me as I
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MOSFET power dissipation is the sum of the conduction loss and the switching losses. These power losses are very different from each other. Conduction loss is the static loss wherein the main contributor is the drain to source on-state resistance of the MOSFET as well as the drain current. While switching losses are dynamic losses that are dependent on the
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MOSFET could be used as a switch or amplifier. Regardless of the application, there is a conduction loss. Let’s explore what is the meaning of conduction loss and how to compute MOSFET conduction loss. Conduction loss is the main contributor to MOSFET power dissipation when operating in a non-switching application. Even in switching applications, conduction loss is still very significant
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How to get MOSFET correct RDSon value is the pre-requisite to compute the MOSFET conduction loss or static power dissipation. RDSon is the drain to source on-state resistance of the MOSFET. The term “correct” is relative to the target result. Supposing the target is to compute the maximum power dissipation, then the correct RDSon value must be the worst-case value.
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There are two types of losses in MOSFET. One is conduction loss and the other one is switching loss. Conduction loss is explained in detail here. Switching loss is not as easy as computing the conduction loss. There are many parameters to consider. You need to understand these parameters to select the correct values. However, you don’t need any more
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MOSFET will not work if the gate to source voltage is not satisfied. VGS threshold is one of the specifications in the datasheet. However, it needs little understanding on how to determine the right VGS threshold. This article will discuss how to determine the correct MOSFET VGS threshold. How to Determine the Correct MOSFET VGS Threshold from the Datasheet To
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The important MOSFET design parameter to consider during circuit design are gate threshold voltage, on-state resistance, current stress, voltage stress, power stress and thermal stress to name few. All parameters will be discussed in this topic so keep reading. Threshold voltage refers to the gate to source voltage requirement for the MOSFET to turn on. On-state resistance is the equivalent
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