Over temperature protection circuit design is not complicated as you may think. It could be done by using a thermistor and other discrete devices. If you have question on how to design over temperature protection circuit or planning to make one, this article is for you, so keep reading. Key Definitions Used on How to Design Over Temperature Protection Circuit
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P-Channel MOSFET is not popularly known compared to the N-Channel variant. Others said it is because difficult to deal with while others are saying it is not supply abundant and there are others saying that it is only limited to few applications. In this article, I will concentrate to the last reason, about applications. So, stay with me as I
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MOSFET power dissipation is the sum of the conduction loss and the switching losses. These power losses are very different from each other. Conduction loss is the static loss wherein the main contributor is the drain to source on-state resistance of the MOSFET as well as the drain current. While switching losses are dynamic losses that are dependent on the
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MOSFET could be used as a switch or amplifier. Regardless of the application, there is a conduction loss. Let’s explore what is the meaning of conduction loss and how to compute MOSFET conduction loss. Conduction loss is the main contributor to MOSFET power dissipation when operating in a non-switching application. Even in switching applications, conduction loss is still very significant
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How to get MOSFET correct RDSon value is the pre-requisite to compute the MOSFET conduction loss or static power dissipation. RDSon is the drain to source on-state resistance of the MOSFET. The term “correct” is relative to the target result. Supposing the target is to compute the maximum power dissipation, then the correct RDSon value must be the worst-case value.
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There are two types of losses in MOSFET. One is conduction loss and the other one is switching loss. Conduction loss is explained in detail here. Switching loss is not as easy as computing the conduction loss. There are many parameters to consider. You need to understand these parameters to select the correct values. However, you don’t need any more
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MOSFET will not work if the gate to source voltage is not satisfied. VGS threshold is one of the specifications in the datasheet. However, it needs little understanding on how to determine the right VGS threshold. This article will discuss how to determine the correct MOSFET VGS threshold. How to Determine the Correct MOSFET VGS Threshold from the Datasheet To
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The important MOSFET design parameter to consider during circuit design are gate threshold voltage, on-state resistance, current stress, voltage stress, power stress and thermal stress. Threshold voltage refers to the gate to source voltage requirement for the MOSFET to turn on. On-state resistance is the equivalent resistance between drain to source when the MOSFET is on. Current stress is related
Continue readingAre planning to design your own QR flyback? This Quasi Resonant Flyback Design Tool will help you do the job effortlessly. All you need to do is to download the tool on the lowest part of this page. Also ensure that you have Mathcad 14 on your PC to open the file. Try search online if lower versions or higher
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You are maybe one of the individuals who are asking how much savings on inverter refrigerator. Inverter refrigerator technology is getting popularity nowadays. What is the difference between it and the traditional refrigerator? How much saving to expect by choosing the inverter type? How long to get the return of investment in using the inverter one? Let us answer all
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